DocumentCode :
3189239
Title :
Loss optimization of coplanar strips for CMOS RFICs
Author :
Arif, Muhammad Shoaib ; Peroulis, Dimitrios
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
fYear :
2009
fDate :
7-10 Dec. 2009
Firstpage :
2144
Lastpage :
2147
Abstract :
An optimization scheme for minimizing substrate losses in coplanar strips (CPS) transmission line on CMOS grade low resistivity silicon substrate with SU-8 polymer as dielectric interface layer, is presented. It is shown that through careful selection of CPS linewidth, the substrate losses can be sufficiently reduced for a given dielectric layer thickness. For a 100 ¿ CPS line with SU-8 polymer as dielectric, the optimized linewidth has been found to be around three times the SU-8 layer thickness. Utilizing this approach, CPS lines with attenuation as low as 0.9 dB/mm at 40 GHz has been demonstrated on a 15-¿m thick SU-8 layer, which is comparable to the coplanar waveguide (CPW) line losses on similar dielectric thickness as reported in literature. A compact, wideband, and low loss CPW/CPS RF transition has also been presented with the measured RF back-to-back transition loss of less than 0.85 dB till 40 GHz.
Keywords :
CMOS integrated circuits; MIMIC; coplanar transmission lines; polymers; CMOS RFIC; CMOS grade low resistivity silicon substrate; CPS linewidth; SU-8 polymer; coplanar strip transmission line; coplanar waveguide line losses; dielectric interface layer; frequency 40 GHz; low loss CPW-CPS RF transition; resistance 100 ohm; size 15 mum; substrate loss optimisation scheme; Coplanar transmission lines; Coplanar waveguides; Dielectric loss measurement; Dielectric losses; Dielectric substrates; Polymers; Propagation losses; Radio frequency; Radiofrequency integrated circuits; Strips; CMOS; CPS/CPW transition; Coplanar strips; RFIC; SU-8; low resistivity silicon substrate; transmission lines;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2009. APMC 2009. Asia Pacific
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-2801-4
Electronic_ISBN :
978-1-4244-2802-1
Type :
conf
DOI :
10.1109/APMC.2009.5385506
Filename :
5385506
Link To Document :
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