Title :
Small-signal equivalent circuit scaling properties of AlGaAs/GaAs HBTs
Author :
Der-woei Wu ; Fukuda, Motohisa ; Yun, Y.-H. ; Miller, Douglas L.
Author_Institution :
Corp. R&D, M/A-COM Inc, Lowell, MA, USA
Abstract :
The equivalent circuit model parameters are directly extracted from measured S-parameters and then carefully correlated with the device physical layout to provide accurate scaling rules for the design and modeling of HBTs. For devices fabricated with a scaling factor of 4, the predicted MSG/MAG is less than 0.5 dB while normalized error in S-parameters is less than 10% of measurements for the frequency range of 0.045 to 26 GHz.<>
Keywords :
III-V semiconductors; S-parameters; aluminium compounds; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; microwave bipolar transistors; semiconductor device models; 0.045 to 26 GHz; AlGaAs-GaAs; HBTs; S-parameters; device physical layout; equivalent circuit model parameters; scaling properties; scaling rules; small-signal equivalent circuit; Capacitance; Electrical resistance measurement; Equivalent circuits; Frequency response; Gallium arsenide; Geometry; Heterojunction bipolar transistors; Laboratories; Performance analysis; Scattering parameters;
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2581-8
DOI :
10.1109/MWSYM.1995.405927
