DocumentCode :
3190363
Title :
Design of Ka-band Miller divider in 130 nm CMOS
Author :
Ali, Mohammed K. ; Subramanian, Viswanathan ; Zhang, Tao ; Boeck, Georg
Author_Institution :
Microwave Lab., Berlin Inst. of Technol., Berlin, Germany
fYear :
2011
fDate :
Nov. 30 2011-Dec. 2 2011
Firstpage :
205
Lastpage :
208
Abstract :
This work presents the design techniques involved in the realization of CMOS Miller dividers operating in Ka-band frequencies. It will be shown that through a clear understanding of the conditions for stable divider operation, it is easy to design and achieve the optimum performance in terms of required input power, bandwidth for correct division, and power consumption. On-chip inductors are designed as to produce sufficient Q-factor enough to guarantee high loop gain yet wide bandwidth. The designed divide-by-two Miller divider is realized in a 130-nm CMOS technology with a chip area of 680×640 μm2. The realized circuit achieves its optimum at 28 GHz with 10 GHz signal bandwidth. An output power higher than -16 dBm and a minimum required input power values lower than -2 dBm over the whole bandwidth have been measured. The divider consumes 10 mW including the 2 mW for the output balun from a 1.2 V power supply.
Keywords :
CMOS integrated circuits; field effect MMIC; frequency dividers; integrated circuit design; CMOS; Ka-band Miller divider; Q-factor; bandwidth 10 GHz; bandwidth 28 GHz; on-chip inductors; power 2 mW; power consumption; size 130 nm; Attenuation; CMOS integrated circuits; Frequency conversion; Gain; Harmonic analysis; Switching circuits; Transistors; 130 nm CMOS; Dynamic frequency divider (DFD); Miller divider;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radio-Frequency Integration Technology (RFIT), 2011 IEEE International Symposium on
Conference_Location :
Beijing
Print_ISBN :
978-1-4577-0517-5
Type :
conf
DOI :
10.1109/RFIT.2011.6141777
Filename :
6141777
Link To Document :
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