DocumentCode
3190538
Title
When do we need non-quasistatic CMOS RF-models?
Author
Gondro, Elmar ; Kowarik, Oskar ; Knoblinger, Gerhard ; Klein, Peter
Author_Institution
Inst. of Electron, Bundeswehr Univ., Neubiberg, Germany
fYear
2001
fDate
2001
Firstpage
377
Lastpage
380
Abstract
This paper presents criteria for the onset of NQS effects derived from time transient device simulations and S-parameter measurements. For the first time it has been proved that e.g, a 10 μm NMOS transistor can be described up to 27 MHz and a 0.2 μm device up to 46 GHz by the quasistatic approach while the accuracy of the description of the inversion layer charge is still 99%
Keywords
CMOS integrated circuits; UHF field effect transistors; UHF integrated circuits; integrated circuit modelling; inversion layers; semiconductor device models; 0.2 to 10 micron; 27 MHz; 46 GHz; NMOS transistor; NQS effects; S-parameter measurements; inversion layer charge description; nonquasistatic CMOS RF-models; quasistatic approach; time transient device simulations; CMOS technology; Charge carriers; Circuit simulation; Estimation theory; Flowcharts; MOSFET circuits; Medical simulation; Radio frequency; Time measurement; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Custom Integrated Circuits, 2001, IEEE Conference on.
Conference_Location
San Diego, CA
Print_ISBN
0-7803-6591-7
Type
conf
DOI
10.1109/CICC.2001.929804
Filename
929804
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