• DocumentCode
    3190818
  • Title

    Photoluminescence and photoluminescence excitation studies on CuInSe2 absorber layers for solar cells

  • Author

    Zott, S. ; Leo, K. ; Ruckh, M. ; Schock, H. -W

  • Author_Institution
    Inst. fur Angewandte Photophys., Tech. Univ. Dresden, Germany
  • fYear
    1996
  • fDate
    13-17 May 1996
  • Firstpage
    817
  • Lastpage
    820
  • Abstract
    We perform a systematic photoluminescence (PL) study on CuInSe2 solar cell absorber layers. In particular, we investigate Cu/In-ratios from 1.47 to 0.46 which show that the PL response is strongly correlated to the composition. Detailed information about origin and distribution of various defect levels is obtained. Additionally, the influence of sodium diffusion from the substrate on the optical response is investigated
  • Keywords
    copper compounds; crystal defects; diffusion; indium compounds; optical properties; photoluminescence; solar cells; substrates; ternary semiconductors; Cu/In-ratios; CuInSe2; CuInSe2 absorber layers; defect levels; optical response; photoluminescence; photoluminescence excitation; sodium diffusion; solar cells; substrate; Composite materials; Glass; Laser excitation; Optical films; Optical materials; Optical surface waves; Photoluminescence; Photonic band gap; Photovoltaic cells; Stimulated emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
  • Conference_Location
    Washington, DC
  • ISSN
    0160-8371
  • Print_ISBN
    0-7803-3166-4
  • Type

    conf

  • DOI
    10.1109/PVSC.1996.564253
  • Filename
    564253
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3190818