Femtosecond history of free carriers in the conduction band of a wide-bandgap oxide

Author

Petite, Guillaume ; Daguzan, P. ; Guizard, Stéphane ; Martin, Philippe

Author_Institution

CEA, Centre d´´Etudes Nucleaires de Saclay, Gif-sur-Yvette, France

fYear

1995

fDate

22-25 Oct 1995

Firstpage

40

Lastpage

44

Abstract

We present a number of methods using ultra-short laser pulses to investigate the short time behaviour of an electron gas injected in the conduction band of a wide-bandgap oxide. Electron relaxation and trapping can be observed in this way, as well as time-resolved defect creation. The achievable time resolution is at present about 10^-13 s. Strong differences between apparently similar oxides are observed, which correlate with their ability to endure other types of ionising radiation. A detailed study of point defect creation in α-SiO₂ is presented

Keywords

carrier relaxation time; conduction bands; defect absorption spectra; dielectric thin films; electron gas; electron traps; point defects; radiation effects; silicon compounds; time resolved spectra; SiO₂; achievable time resolution; conduction band; electron gas; electron relaxation; electron trapping; free carriers; ionising radiation; point defect creation; time-resolved defect creation; ultra-short laser pulses; wide-bandgap oxide; Electron traps; Erbium; History; Insulation; Photonic band gap;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Insulation and Dielectric Phenomena, 1995. Annual Report., Conference on

Conference_Location

Virginia Beach, VA

Print_ISBN

0-7803-2931-7

Type

conf

DOI

10.1109/CEIDP.1995.483571

Filename

483571