• DocumentCode
    3190845
  • Title

    Thermal pulse investigation of the generation, transport, and trapping of space charge in microelectronics buried oxide structures

  • Author

    DeReggi, AiméS

  • Author_Institution
    Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
  • fYear
    1995
  • fDate
    22-25 Oct 1995
  • Firstpage
    45
  • Lastpage
    48
  • Abstract
    A first laser-induced thermal pulse study of electroded SIMOX structures is reported with the goal of characterizing the space-charge buildup in the 400 nm thick, insulating SiO2 layer, separating a 150 nm thick device layer from the integral 500 μm thick Si substrate. The results reveal unexpectedly complex thermal pulse response atypical of a simple dielectric
  • Keywords
    SIMOX; buried layers; hole traps; laser beam effects; photothermal effects; space charge; space-charge-limited conduction; 150 nm; 400 nm; 500 micron; SiO2-Si; device layer; electroded SIMOX structures; laser-induced thermal pulse; microelectronics buried oxide structures; space charge; space-charge buildup; thermal pulse investigation; Dielectric substrates; Dielectrics and electrical insulation; Optical pulse generation; Optical pulses; Pulse generation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Insulation and Dielectric Phenomena, 1995. Annual Report., Conference on
  • Conference_Location
    Virginia Beach, VA
  • Print_ISBN
    0-7803-2931-7
  • Type

    conf

  • DOI
    10.1109/CEIDP.1995.483572
  • Filename
    483572
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3190845