Title :
An improved GaAs MESFET model for the pulsed I-V measurement
Author_Institution :
Japan Radio Co. Ltd., Tokyo, Japan
Abstract :
This paper describes an improved large signal model of the GaAs MESFET that agrees accurately with the I-V characteristics produced by the pulsed I-V measurement of the GaAs MESFET. The pulsed I-V measurement system developed and used to evaluate the performance of the model is also described. The calculated results for a microwave power amplifier predicted using an improved large signal model show good agreement with the experimental results obtained using the pulsed I-V measurement system.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; electric variables measurement; equivalent circuits; gallium arsenide; microwave field effect transistors; microwave measurement; semiconductor device models; semiconductor device testing; GaAs; MESFET model; large signal model; measurement system; microwave power amplifier; pulsed I-V measurement; Gallium arsenide; MESFETs; Microwave amplifiers; Microwave measurements; Power amplifiers; Power measurement; Power system modeling; Predictive models; Pulse amplifiers; Pulse measurements;
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2581-8
DOI :
10.1109/MWSYM.1995.405931
