New MODFET small signal circuit model required for millimeter-wave MMIC design: extraction and validation to 120 GHz

Author

Tasker, P.J. ; Braunstein, J.

Author_Institution

Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany

fYear

1995

fDate

16-20 May 1995

Firstpage

611

Abstract

A new MODFET circuit model required for millimeter-wave MMIC design has been developed, since it was found conventional MODFET circuit topology normally used was not able to accurately simulate measurement data above 75 GHz. This new model accounts for distributed effects in the transistor layout and includes a modified intrinsic transistor circuit topology. This circuit model has been experimentally validated by on-wafer S-parameter measurements performed to 120 GHz. This was made possible by the development of two advanced millimeter-wave on-wafer S-parameter measurement systems.<>

Keywords

S-parameters; equivalent circuits; field effect MIMIC; high electron mobility transistors; integrated circuit design; millimetre wave field effect transistors; millimetre wave measurement; semiconductor device models; semiconductor device testing; 120 GHz; EHF; MIMIC; MM-wave measurement; MODFET; distributed effects; millimeter-wave MMIC; modified intrinsic transistor circuit topology; onwafer S-parameter measurement systems; small signal circuit model; transistor layout; Coaxial components; MMICs; MODFET circuits; Millimeter wave circuits; Millimeter wave measurements; Millimeter wave transistors; Performance evaluation; Probes; Scattering parameters; Signal design;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1995., IEEE MTT-S International

Conference_Location

Orlando, FL, USA

ISSN

0149-645X

Print_ISBN

0-7803-2581-8

Type

conf

DOI

10.1109/MWSYM.1995.405932

Filename

405932