DocumentCode
3191079
Title
Distributed amplifier using enhancement-mode AlGaN/GaN HEMTs
Author
Cheng, Zhiqun ; Zhou, Xiaopeng ; Chen, Kevin J.
Author_Institution
Key Lab. of RF Circuit & Syst., Hangzhou Dianzi Univ., Hangzhou
fYear
2008
fDate
25-27 May 2008
Firstpage
94
Lastpage
96
Abstract
Distributed amplifiers (DAs) using 1mm-gate enhancement-mode AlGaN/GaN HEMT were designed and fabricated. Design process and simulation results of the DA are given. Simulation results show the input and output VSWR (voltage standing wave ratio) of less than 2, associated gain of more than 8.5dB and gain ripple of less than 1dB at frequency from 2GHz to 6GHz.
Keywords
HEMT circuits; UHF amplifiers; aluminium compounds; distributed amplifiers; gallium compounds; microwave amplifiers; wide band gap semiconductors; AlGaN-GaN; UHF amplifiers; distributed amplifiers; enhancement-mode; frequency 2 GHz to 6 GHz; high electron mobility transistors; microwave amplifiers; Aluminum gallium nitride; Distributed amplifiers; Fabrication; Gallium nitride; HEMTs; MODFETs; Plasma applications; Plasma sources; Plasma temperature; Power transmission lines;
fLanguage
English
Publisher
ieee
Conference_Titel
Communications, Circuits and Systems, 2008. ICCCAS 2008. International Conference on
Conference_Location
Fujian
Print_ISBN
978-1-4244-2063-6
Electronic_ISBN
978-1-4244-2064-3
Type
conf
DOI
10.1109/ICCCAS.2008.4657735
Filename
4657735
Link To Document