DocumentCode
3191461
Title
Impedance of GaAs p-i-n diodes
Author
Gopinath, A.
Author_Institution
Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA
fYear
1988
fDate
25-27 May 1988
Firstpage
801
Abstract
A computer model of GaAs p-i-n diodes shows that when the intrinsic-layer (i-layer) thickness is greater than about four times the diffusion length, diode forward resistance can be high. Comparison with measured I-V characteristics suggests that diodes now have i-layers with lifetimes of about 10/sup -7/ s.<>
Keywords
III-V semiconductors; digital simulation; gallium arsenide; semiconductor device models; semiconductor diodes; solid-state microwave devices; 1E-7 s; GaAs; GaAs p-i-n diodes; computer model; diode forward resistance; impedance; intrinsic layer thickness; measured I-V characteristics; Charge carrier lifetime; Charge carrier processes; Electron mobility; Electron traps; Gallium arsenide; Impedance; Newton method; P-i-n diodes; Silicon; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1988., IEEE MTT-S International
Conference_Location
New York, NY, USA
Type
conf
DOI
10.1109/MWSYM.1988.22153
Filename
22153
Link To Document