Determination of the valence-band offset of CdS/CIS solar cell devices by target factor analysis

Author

Niles, D.W. ; Contreras, M. ; Ramanathan, K. ; Noufi, R.

Author_Institution

Nat. Renewable Energy Lab., Golden, CO, USA

fYear

1996

fDate

13-17 May 1996

Firstpage

833

Lastpage

836

Abstract

X-ray photoemission spectroscopy (XPS) is used to determine and compare the valence-band offsets (ΔE_v) for CdS grown by chemical bath deposition on single-crystal and thin-film CuInSe₂ (CIS). The thin-film CIS device was suitable for photovoltaic energy production. By sputtering through the CdS/CIS interface and reducing the depth profile with target factor analysis, the magnitude of ΔE_v was determined to be ΔE_v=1.06±0.15 eV for both the single-crystal and thin-film interfaces. This determination of ΔE_v is about 0.25 eV larger than many previously reported estimations CdS grown by physical vapor deposition on CIS and helps explain the record performance of CdS/CIS photovoltaic devices

Keywords

II-VI semiconductors; X-ray photoelectron spectra; cadmium compounds; copper compounds; indium compounds; semiconductor device testing; semiconductor growth; semiconductor thin films; solar cells; sputter deposition; sputtered coatings; ternary semiconductors; valence bands; 0.91 to 1.21 eV; CdS-CuInSe₂; CdS-CuInSe₂ solar cells; X-ray photoemission spectroscopy; chemical bath deposition; depth profile; interfaces; performance measurements; photovoltaic energy production; sputtering; target factor analysis; valence-band offset; Chemicals; Computational Intelligence Society; Photoelectricity; Photovoltaic cells; Photovoltaic systems; Production; Solar power generation; Spectroscopy; Sputtering; Thin film devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE

Conference_Location

Washington, DC

ISSN

0160-8371

Print_ISBN

0-7803-3166-4

Type

conf

DOI

10.1109/PVSC.1996.564257

Filename

564257