Title :
The secondary electron emission simulation of insulators: relation with some material physical constants
Author :
Renoud, R. ; Rosenberg, N. ; Vicario, E.
Author_Institution :
Dept. de Phys. des Mater., Univ. Claude Bernard, Villeurbanne, France
Abstract :
We are dealing with secondary electron emission phenomena of insulators as they take place at the early stages of irradiation by a narrow electron beam. Charging effects are then negligible. Using a Monte Carlo simulation method, we follow the electronic trajectories by introducing the different interactions (elastic, electron-electron, electron-core and electron-phonon scattering). The secondary electron cascade and the charge trapping effect are taken into account. Quartz-α is considered as the reference material. Then we introduce miscellaneous values for various physical constants (electronic affinity, dielectric constant, trapping parameters, ...) and we study the resulting secondary yield. We can see in particular that the charge trapping parameters are preponderant factors. From the trapping site density values, we can understand why insulators with otherwise similar properties have different secondary emission yields. In fact, secondary electron emission is a revealing of the sample “story”
Keywords :
Monte Carlo methods; electron beam effects; secondary electron emission; α-quartz; Monte Carlo simulation; SiO2; cascade; charge trapping; dielectric constant; elastic scattering; electron beam irradiation; electron-core scattering; electron-electron scattering; electron-phonon scattering; electronic affinity; insulators; physical constants; secondary electron emission; yield; Dielectric breakdown; Dielectric constant; Dielectric materials; Dielectrics and electrical insulation; Distributed computing; Electron beams; Electron emission; Electron traps; Phonons; Scattering;
Conference_Titel :
Electrical Insulation and Dielectric Phenomena, 1995. Annual Report., Conference on
Conference_Location :
Virginia Beach, VA
Print_ISBN :
0-7803-2931-7
DOI :
10.1109/CEIDP.1995.483604