• DocumentCode
    3191569
  • Title

    Correlation between high tension performances in vacuum and space charge characteristics

  • Author

    Klein, P. ; Roue, J. ; Pauwels, J.C.

  • Author_Institution
    SODERN, Limeil-Brevannes, France
  • fYear
    1995
  • fDate
    22-25 Oct 1995
  • Firstpage
    183
  • Lastpage
    186
  • Abstract
    A high voltage device was built in order to test alumina insulators in vacuum (~2.10-8 torr). With this experimental set up and a specific test procedure, it is possible to classify the different types and batches of the commercial ceramics which have been tested. Doping with manganese the alumina ceramics (oxide surface diffusion process), modifies their behaviour with regard to the space charge physics: at room temperature, it is possible to characterize according to the “mirror” method, the embedded space charge which has been generated by the electron gun of a SEM, while, before doping, such measurements were not possible (very low space charge, if any). With the help of this high-voltage set-up, it is possible to note the doping influence on the recorded characteristics: conditioned voltage, holdoff voltage and breakdown rate at a given voltage. Some space charge physics related explanations of the results are suggested. They should be validated by further tests on a greater number of samples
  • Keywords
    alumina; ceramic insulation; space charge; vacuum insulation; Al2O3:Mn; SEM electron gun; alumina insulator; breakdown rate; ceramic; conditioned voltage; high voltage device; holdoff voltage; manganese doping; mirror method; oxide surface diffusion; space charge; vacuum; Breakdown voltage; Ceramics; Diffusion processes; Doping; Insulation; Insulator testing; Manganese; Physics; Space charge; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Insulation and Dielectric Phenomena, 1995. Annual Report., Conference on
  • Conference_Location
    Virginia Beach, VA
  • Print_ISBN
    0-7803-2931-7
  • Type

    conf

  • DOI
    10.1109/CEIDP.1995.483606
  • Filename
    483606