DocumentCode
3191674
Title
Dependence of Minimum Operating Voltage (VDDmin) on Block Size of 90-nm CMOS Ring Oscillators and its Implications in Low Power DFM
Author
Niiyama, Taro ; Zhe, Piao ; Ishida, Koichi ; Murakata, Masami ; Takamiya, Sakuraio ; Sakurai, Takayasu
Author_Institution
Univ. of Tokyo, Tokyo
fYear
2008
fDate
17-19 March 2008
Firstpage
133
Lastpage
136
Abstract
The minimum operating voltage (VDDmin) of 90-nm CMOS ring oscillators (RO´s) is investigated in order to clarify the lower limit of supply voltage (VDD) for logic circuits. The measured VDDmin is determined by the intra-die threshold voltage random variations and increased from 91 mV to 224 mV when the number of RO stages increased from 11 to 1001, which hinders the VDD scaling. Lowering VDDmin is difficult, since it would require an impractical inverter-by-inverter adaptive body bias control. Therefore, the fine-grain adaptive VDD control will be more effective for the ultra low voltage logic circuits to reduce the power consumption.
Keywords
CMOS integrated circuits; CMOS logic circuits; oscillators; CMOS ring oscillators; inverter-by-inverter adaptive body bias control; low power DFM; minimum operating voltage; power consumption; ultra low voltage logic circuits; Adaptive control; CMOS logic circuits; Energy consumption; Logic circuits; Low voltage; Programmable control; Ring oscillators; Threshold voltage; Voltage control; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Quality Electronic Design, 2008. ISQED 2008. 9th International Symposium on
Conference_Location
San Jose, CA
Print_ISBN
978-0-7695-3117-5
Type
conf
DOI
10.1109/ISQED.2008.4479713
Filename
4479713
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