Determination of the internal series resistance of CIS and CIGS photovoltaic cell structures

Author

Delahoy, Alan E. ; Payne, Adam M.

Author_Institution

Energy Photovoltaics Inc., Princeton, NJ, USA

fYear

1996

fDate

13-17 May 1996

Firstpage

841

Lastpage

844

Abstract

A new method is described to determine the internal series resistance of thin film solar cells. The method involves illumination of a small area of the solar cell with light sufficiently intense to make the internal resistance easily observable. For the CIS and CIGS cells examined, specific internal resistances ranging between 7×10^-2 and 3×10^-4 Ω cm² were obtained. Such remarkably low values confirm the ability of CIGS to function as a concentrator solar cell

Keywords

copper compounds; electric resistance measurement; gallium compounds; indium compounds; semiconductor device models; semiconductor device testing; semiconductor thin films; solar cells; ternary semiconductors; CuInGaSe₂; CuInGaSe₂ solar cells; CuInSe₂; CuInSe₂ solar cells; concentrator solar cell; illumination; internal series resistance; photovoltaic cell structures; Computational Intelligence Society; Contact resistance; Electric resistance; Laser beams; Optical films; Photoconductivity; Photovoltaic cells; Transistors; Voltage; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE

Conference_Location

Washington, DC

ISSN

0160-8371

Print_ISBN

0-7803-3166-4

Type

conf

DOI

10.1109/PVSC.1996.564259

Filename

564259