DocumentCode
3191897
Title
Passively Q-switched 1.54 μm Yb-Er glass microchip lasers
Author
Denker, B. ; Galagan, B. ; Osiko, V. ; Sverchkov, S. ; Karlsson, Gunnar ; Laurell, Fredrik
Author_Institution
Gen. Phys. Inst., Moscow, Russia
fYear
2003
fDate
22-27 June 2003
Firstpage
446
Abstract
The present paper describes the development of Yb-Er glass microchip lasers passively Q- switched by Co2+:MgAl2O4 saturable absorbers. Er-Yb:glass elements were flat parallel plates of 0.7-1 mm thickness with erbium ions content about 1020 cm-3. One side of all the glass elements was HR-coated at 1.54 μm and AR-coated at the pump wavelength (975 nm).
Keywords
Q-switching; antireflection coatings; cobalt; erbium; laser transitions; magnesium compounds; microchip lasers; optical saturable absorption; ytterbium; 0.7 Mm to 1 mm; 1.54 mum; 975 nm; AR coating; HR coating; MgAl2O4:Co; SiO2:Er,Yb; Yb-Er glass microchip lasers; passive Q-switching; saturable absorbers; Chemical elements; Dynamic range; Instruments; Laser ablation; Mass spectroscopy; Mercury (metals); Microchip lasers; Minerals; Power lasers; Surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics Conference, 2003. EQEC '03. European
Print_ISBN
0-7803-7733-8
Type
conf
DOI
10.1109/EQEC.2003.1314304
Filename
1314304
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