Title :
A High Current Gain Horizontal Current Bipolar Transistor (HCBT) Technology for the BiCMOS Integration with FinFETs
Author :
Kumar, M. Jagadesh ; Nawal, Susheel ; Grover, Sachit
Author_Institution :
Department of Electrical Engineering, Indian Institute of Technology, New Delhi 110 016, India
Abstract :
We report a new bipolar transistor structure called the SALTran HCBT with extremely large current gain not reported so far in literature. The complete process steps and the device characteristics are analyzed using two-dimensional process and device simulations. It is also shown that the proposed SALTran HCBT can be fabricated without any additional process complexity.
Keywords :
Bipolar transistor; Current gain; Simulation; BiCMOS integrated circuits; Bipolar transistors; Circuit simulation; Doping; Electron emission; Fabrication; FinFETs; MOSFETs; Medical simulation; Substrates; Bipolar transistor; Current gain; Simulation;
Conference_Titel :
INDICON, 2005 Annual IEEE
Print_ISBN :
0-7803-9503-4
DOI :
10.1109/INDCON.2005.1590211
