• DocumentCode
    3191980
  • Title

    Optical and laser properties of epitaxially grown passively Q-switched Cr4+:GGG/ Nd3+:GGG, Cr4+:YAG/ Yb3+:YAG and Cr4+:YAG/ Nd3+ :YAG microchip lasers

  • Author

    Kopczynski, K. ; Sarnecki, J. ; Mierczyk, Z. ; Kwasny, M. ; Mlynczak, J. ; Syvorotka, Ihor M.

  • Author_Institution
    Inst. of Optoelectron., Mil. Univ. of Technol., Warsaw, Poland
  • fYear
    2003
  • fDate
    22-27 June 2003
  • Firstpage
    452
  • Abstract
    Liquid phase epitaxy technique is used to grow Cr4+ doped GGG and YAG monocrystalline thin films as a saturable absorber for passive Q-switching of Nd:GGG, Yb:YAG and Nd:YAG microchip lasers. Comparison of laser performance and influence of epitaxial film saturable absorber properties on microchip characteristics (repetition rate, pulse energy and pulse length) are reported.
  • Keywords
    Q-switching; chromium; liquid phase epitaxial growth; microchip lasers; neodymium; optical films; optical saturable absorption; ytterbium; Cr4+:GGG microchip laser; Cr4+:YAG microchip laser; GdGG:Cr4+; GdGG:Nd3+; GdGa5O12:Cr; GdGa5O12:Nd; Nd3+ :YAG microchip laser; Nd3+:GGG microchip laser; YAG:Cr4+; YAG:Nd3+; YAG:Yb3+; YAl5O12:Cr; YAl5O12:Nd; YAl5O12:Yb; Yb3+:YAG microchip laser; liquid phase epitaxy; monocrystalline thin films; passive Q-switching; pulse energy; pulse length; repetition rate; saturable absorber;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quantum Electronics Conference, 2003. EQEC '03. European
  • Print_ISBN
    0-7803-7733-8
  • Type

    conf

  • DOI
    10.1109/EQEC.2003.1314310
  • Filename
    1314310
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3191980