• DocumentCode
    3192366
  • Title

    Parasitic Aware Process Variation Tolerant Voltage Controlled Oscillator (VCO) Design

  • Author

    Ghai, Dhruva ; Mohanty, Saraju P. ; Kougianos, Elias

  • Author_Institution
    Univ. of North Texas, Denton
  • fYear
    2008
  • fDate
    17-19 March 2008
  • Firstpage
    330
  • Lastpage
    333
  • Abstract
    In this paper we present a parasitic aware, process variation tolerant optimization methodology that may be applied to nanoscale circuits to ensure better yield. A current- starved voltage controlled oscillator (VCO) is treated as a case study and to the best of the authors´ knowledge, this is the first VCO design that accounts for both parasitic degradation and process variation together. The physical design of the VCO is carried out in a generic 90 nm Salicide 1.2V/2.5V 1 Poly 9 Metal process design kit. The oscillation frequency is the objective function with the area overhead as constraint. A performance degradation of 43.5% is observed when the parasitic extracted circuit was subjected to worst case process variation. After a single physical design iteration, the frequency of oscillation was within 4.5% of the target.
  • Keywords
    CMOS integrated circuits; integrated circuit design; integrated circuit yield; iterative methods; nanoelectronics; optimisation; radiofrequency integrated circuits; radiofrequency oscillators; voltage-controlled oscillators; Salicide 1 Poly 9 Metal process design kit; VCO design; nanoscale CMOS RF circuit yield; parasitic aware process variation tolerant optimization; physical design iteration; size 90 nm; voltage controlled oscillator; CMOS technology; Degradation; Design optimization; Inductors; Integrated circuit interconnections; Phase noise; Process design; Radio frequency; Timing; Voltage-controlled oscillators;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quality Electronic Design, 2008. ISQED 2008. 9th International Symposium on
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-0-7695-3117-5
  • Type

    conf

  • DOI
    10.1109/ISQED.2008.4479750
  • Filename
    4479750