• DocumentCode
    319244
  • Title

    Uniform selectively oxidized 2-dimensional VCSEL arrays for VLSI photonics

  • Author

    Choquette, Kent D. ; Hou, H.Q. ; Geib, K.M. ; Hammons, B.E.

  • Author_Institution
    Center for Compound Semicond. Technol., Sandia Nat. Labs., Albuquerque, NM, USA
  • Volume
    2
  • fYear
    1997
  • fDate
    10-13 Nov 1997
  • Firstpage
    417
  • Abstract
    To achieve high density vertical cavity surface emitting (VCSEL) laser arrays, the material system and device structure must be optimized. Here we employ strain-balanced In0.27Ga0.73 As quantum wells designed to emit at 1.06 μm
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; infrared sources; laser cavity resonators; laser transitions; oxidation; quantum well lasers; semiconductor laser arrays; surface emitting lasers; 1.06 mum; In0.27Ga0.73As; device structure; high density vertical cavity surface emitting laser; laser transitions; material system; optimized; strain-balanced In0.27Ga0.73As quantum well; uniform selectively oxidized 2D VCSEL arrays; Bonding; Laboratories; Optical arrays; Oxidation; Photonics; Power generation; Semiconductor laser arrays; Thermal management; Vertical cavity surface emitting lasers; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
  • Conference_Location
    San Francisco, CA
  • ISSN
    1092-8081
  • Print_ISBN
    0-7803-3895-2
  • Type

    conf

  • DOI
    10.1109/LEOS.1997.645496
  • Filename
    645496
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=319244