DocumentCode
3192610
Title
Characterizing the Impact of Substrate Noise on High-Speed Flash ADCs
Author
Nikaeen, Parastoo ; Murmann, Boris ; Dutton, Robert W.
Author_Institution
Stanford Univ., Stanford
fYear
2008
fDate
17-19 March 2008
Firstpage
396
Lastpage
400
Abstract
A 4-bit flash ADC is investigated in presence of substrate noise generated by switching activities in digital blocks. The impact of noise is analyzed in different building blocks of the ADC and is measured experimentally using a high-speed ADC test block fabricated in a 0.18-mum SiGe BiCMOS process. Measurement results show that noise spikes in the substrate cause distortion in the prototype ADC and degrade its SNDR by 2 dB (10%) at noise frequencies above 200 MHz.
Keywords
BiCMOS digital integrated circuits; Ge-Si alloys; analogue-digital conversion; integrated circuit noise; integrated circuit testing; BiCMOS process; SiGe; digital blocks; high-speed flash ADC test block; size 0.18 mum; substrate noise; BiCMOS integrated circuits; Degradation; Distortion measurement; Frequency measurement; Germanium silicon alloys; Noise generators; Noise measurement; Prototypes; Silicon germanium; Testing; SNR; comparator; flash ADC; substrate noise;
fLanguage
English
Publisher
ieee
Conference_Titel
Quality Electronic Design, 2008. ISQED 2008. 9th International Symposium on
Conference_Location
San Jose, CA
Print_ISBN
978-0-7695-3117-5
Type
conf
DOI
10.1109/ISQED.2008.4479764
Filename
4479764
Link To Document