Relation between plasma process-induced oxide failure fraction and antenna ratio

Author

Wang, Zhichun ; Scarpa, Andrea ; Salm, Cora ; Kuper, Fred

Author_Institution

MESA Res. Inst., Twente Univ., Enschede, Netherlands

fYear

2001

fDate

2001

Firstpage

16

Lastpage

19

Abstract

Conventional antenna charging theory predicts that the net current drawn from plasma is proportional to the charge collecting area of the antenna. However, a quantitative relation between plasma process-induced oxide failure fraction and antenna ratio (AR) has not been found yet. In this paper, yield data of antenna testers have been correlated to the AR in a 0.18 μm CMOS technology process. A model is built which fits the experiment data very well. Based on this model, yield loss data obtained on large AR test structures can be used to extrapolate the charging currents and yield loss of smaller AR structures which occur more often in real circuits

Keywords

CMOS integrated circuits; dielectric thin films; electric current; extrapolation; failure analysis; integrated circuit reliability; integrated circuit testing; integrated circuit yield; plasma materials processing; surface charging; surface treatment; 0.18 micron; AR structures; AR test structures; CMOS technology; SiO₂-Si; antenna charge collecting area; antenna charging theory; antenna ratio; antenna testers; charging currents; extrapolation; model; net plasma current; plasma process-induced oxide failure fraction; yield data; yield loss; yield loss data; Antenna theory; CMOS process; CMOS technology; Circuit testing; Degradation; Leakage current; Plasma devices; Plasma measurements; Protection; Semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma- and Process-Induced Damage, 2001 6th International Symposium on

Conference_Location

Monterey, CA

Print_ISBN

0-9651577-5-X

Type

conf

DOI

10.1109/PPID.2001.929968

Filename

929968