Title :
Relation between plasma process-induced oxide failure fraction and antenna ratio
Author :
Wang, Zhichun ; Scarpa, Andrea ; Salm, Cora ; Kuper, Fred
Author_Institution :
MESA Res. Inst., Twente Univ., Enschede, Netherlands
Abstract :
Conventional antenna charging theory predicts that the net current drawn from plasma is proportional to the charge collecting area of the antenna. However, a quantitative relation between plasma process-induced oxide failure fraction and antenna ratio (AR) has not been found yet. In this paper, yield data of antenna testers have been correlated to the AR in a 0.18 μm CMOS technology process. A model is built which fits the experiment data very well. Based on this model, yield loss data obtained on large AR test structures can be used to extrapolate the charging currents and yield loss of smaller AR structures which occur more often in real circuits
Keywords :
CMOS integrated circuits; dielectric thin films; electric current; extrapolation; failure analysis; integrated circuit reliability; integrated circuit testing; integrated circuit yield; plasma materials processing; surface charging; surface treatment; 0.18 micron; AR structures; AR test structures; CMOS technology; SiO2-Si; antenna charge collecting area; antenna charging theory; antenna ratio; antenna testers; charging currents; extrapolation; model; net plasma current; plasma process-induced oxide failure fraction; yield data; yield loss; yield loss data; Antenna theory; CMOS process; CMOS technology; Circuit testing; Degradation; Leakage current; Plasma devices; Plasma measurements; Protection; Semiconductor device modeling;
Conference_Titel :
Plasma- and Process-Induced Damage, 2001 6th International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-9651577-5-X
DOI :
10.1109/PPID.2001.929968
