Hybrid Integration of Bandgap Reference Circuits Using Silicon ICs and Germanium Devices

Author

Kim, Jae Wook ; Murmann, Boris ; Dutton, Robert W.

Author_Institution

Stanford Univ., Stanford

fYear

2008

fDate

17-19 March 2008

Firstpage

429

Lastpage

432

Abstract

Low-voltage hybrid silicon-germanium bandgap reference circuits that can defy the voltage scaling limits of those realized in purely silicon-based technologies are implemented. Germanium diodes replace silicon diodes in two conventional bandgap reference circuits fabricated in a 0.18-mum Si CMOS process, and experimental results validate the benefit of exploiting a low bandgap material. The output references are measured as 670 mV and 310 mV with 9.3 mV (287 ppm/degC) and 4.6 mV (302 ppm/degC) variation, respectively, over 5 ~ 56degC. In addition, the high temperature characteristics limiting the operation range related to low bandgap are investigated.

Keywords

CMOS integrated circuits; elemental semiconductors; energy gap; germanium; integrated circuit design; integrated circuit manufacture; reference circuits; silicon; voltage regulators; CMOS; Ge; Si; bandgap reference circuits; hybrid integration; integrated circuits; semiconductor device; size 0.18 mum; temperature 5 C to 56 C; voltage 310 mV; voltage 4.6 mV; voltage 670 mV; voltage 9.3 mV; CMOS process; CMOS technology; Circuits; Diodes; Germanium silicon alloys; Photonic band gap; Silicon germanium; Temperature distribution; Voltage; bandgap reference; germanium devices; hybrid integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Quality Electronic Design, 2008. ISQED 2008. 9th International Symposium on

Conference_Location

San Jose, CA

Print_ISBN

978-0-7695-3117-5

Type

conf

DOI

10.1109/ISQED.2008.4479770

Filename

4479770