DocumentCode
3192844
Title
First demonstration of modulation via field-induced charge-separation in VCSELS
Author
Lin, Chin-Han ; Zheng, Yan ; Rodwell, Mark J.W. ; Coldren, Larry A.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA
fYear
2010
fDate
26-30 Sept. 2010
Firstpage
1
Lastpage
2
Abstract
Novel three-terminal field-induced charge-separation lasers (FICSLs) in VCSEL form were designed and fabricated. The new gain modulation mechanism of hole-electron separation was demonstrated for the first time by applying a variable gate voltage with a constant injection current to the active region.
Keywords
laser cavity resonators; optical modulation; semiconductor lasers; surface emitting lasers; VCSEL; constant injection current; gain modulation mechanism; hole-electron separation; three-terminal field-induced charge-separation lasers; variable gate voltage; Bandwidth; Diode lasers; Gallium arsenide; Logic gates; Modulation; Power generation; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
Conference_Location
Kyoto
ISSN
0899-9406
Print_ISBN
978-1-4244-5683-3
Type
conf
DOI
10.1109/ISLC.2010.5642635
Filename
5642635
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