DocumentCode :
3192942
Title :
Lasing in GaAs1−xBix/GaAs thin film cavity with low-temperature-dependent oscillation wavelength
Author :
Tominaga, Yoriko ; Oe, Kunishige ; Yoshimoto, Masahiro
Author_Institution :
Dept. of Electron., Kyoto Inst. of Technol., Kyoto, Japan
fYear :
2010
fDate :
26-30 Sept. 2010
Firstpage :
205
Lastpage :
206
Abstract :
Lasing oscillation from GaAs1-xBix/GaAs thin film with Fabry-Perot cavity was performed for the first time by photo-pumping. The lasing emission peak energy decreased at a constant rate of -0.18 meV/K, which is only 40 % of the temperature coefficient of the GaAs band gap.
Keywords :
Fabry-Perot interferometers; III-V semiconductors; energy gap; gallium arsenide; laser cavity resonators; optical pumping; semiconductor lasers; semiconductor thin films; Fabry-Perot cavity; GaAsBi-GaAs; lasing emission peak energy; lasing oscillation; low-temperature-dependent oscillation wavelength; photo-pumping; temperature coefficient; thin film cavity; Gallium arsenide; Laser excitation; Metals; Oscillators; Photonic band gap; Pump lasers; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
Conference_Location :
Kyoto
ISSN :
0899-9406
Print_ISBN :
978-1-4244-5683-3
Type :
conf
DOI :
10.1109/ISLC.2010.5642640
Filename :
5642640
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3192942
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