• DocumentCode
    3192942
  • Title

    Lasing in GaAs1−xBix/GaAs thin film cavity with low-temperature-dependent oscillation wavelength

  • Author

    Tominaga, Yoriko ; Oe, Kunishige ; Yoshimoto, Masahiro

  • Author_Institution
    Dept. of Electron., Kyoto Inst. of Technol., Kyoto, Japan
  • fYear
    2010
  • fDate
    26-30 Sept. 2010
  • Firstpage
    205
  • Lastpage
    206
  • Abstract
    Lasing oscillation from GaAs1-xBix/GaAs thin film with Fabry-Perot cavity was performed for the first time by photo-pumping. The lasing emission peak energy decreased at a constant rate of -0.18 meV/K, which is only 40 % of the temperature coefficient of the GaAs band gap.
  • Keywords
    Fabry-Perot interferometers; III-V semiconductors; energy gap; gallium arsenide; laser cavity resonators; optical pumping; semiconductor lasers; semiconductor thin films; Fabry-Perot cavity; GaAsBi-GaAs; lasing emission peak energy; lasing oscillation; low-temperature-dependent oscillation wavelength; photo-pumping; temperature coefficient; thin film cavity; Gallium arsenide; Laser excitation; Metals; Oscillators; Photonic band gap; Pump lasers; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
  • Conference_Location
    Kyoto
  • ISSN
    0899-9406
  • Print_ISBN
    978-1-4244-5683-3
  • Type

    conf

  • DOI
    10.1109/ISLC.2010.5642640
  • Filename
    5642640
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3192942