Effect of reactive ion etching chemistry on plasma damage in EPROM cells

Author

Barlingay, C.K. ; Yach, Randy ; Lukaszek, Wes

Author_Institution

Microchip Technol. Inc., Tempe, AZ, USA

fYear

2001

fDate

2001

Firstpage

76

Lastpage

79

Abstract

There has been much work on studying the effects of plasma damage on microelectronic circuits. Most of this work has focused on gate oxide damage as a result of plasma charging. This paper explores damage to nonvolatile memory cells, specifically erasable programmable read only memories (EPROMs). This damage is unique in that it only affects EPROM cells and their ability to store charge. Several causes of damage discussed here include plasma chemistry, which was found to be the key to solving the problem

Keywords

EPROM; integrated circuit reliability; integrated circuit testing; plasma chemistry; plasma materials processing; sputter etching; surface charging; surface chemistry; EPROM cells; EPROMs; SiO₂-Si; charge storage; erasable programmable read only memories; gate oxide damage; microelectronic circuits; nonvolatile memory cells; plasma charging; plasma chemistry; plasma damage; reactive ion etching chemistry; Circuits; EPROM; Etching; Nonvolatile memory; Plasma applications; Plasma chemistry; Plasma density; Plasma devices; Plasma materials processing; Plasma measurements;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma- and Process-Induced Damage, 2001 6th International Symposium on

Conference_Location

Monterey, CA

Print_ISBN

0-9651577-5-X

Type

conf

DOI

10.1109/PPID.2001.929983

Filename

929983