Title :
Exciton-polariton laser diodes
Author :
Schneider, C. ; Kim, N.Y. ; Rahimi-Iman, A. ; Nitsche, W.H. ; Lermer, M. ; Kamp, M. ; Reitzenstei, S. ; Worschech, L. ; Höfling, S. ; Yamamoto, Y. ; Forchel, A.
Author_Institution :
Wilhelm-Conrad-Rontgen-Res. Centre for Complex Mater. Syst., Univ. Wurzburg, Würzburg, Germany
Abstract :
Exciton-polariton laser diodes are realized by integrating four InGaAs quantum wells in high quality factor doped distributed Bragg reflector microcavities. Efficient current injection into the active region allow to preserve the strong coupling regime between excitons and photons across the threshold of polariton lasing.
Keywords :
distributed Bragg reflector lasers; excitons; laser cavity resonators; micro-optics; microcavities; polaritons; semiconductor lasers; current injection; exciton-polariton laser diodes; high quality factor doped distributed Bragg reflector microcavities; quantum wells; strong coupling regime; Cavity resonators; Diode lasers; Distributed Bragg reflectors; Laser excitation; Microcavities; Q factor; Semiconductor lasers;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
Conference_Location :
Kyoto
Print_ISBN :
978-1-4244-5683-3
DOI :
10.1109/ISLC.2010.5642642
