Title :
25.8Gbps direct modulation of BH AlGaInAs DFB lasers with p-InP substrate for low driving current
Author :
Sakaino, Go ; Takiguchi, Toru ; Sakuma, Hitoshi ; Watatani, Chikara ; Nagira, Takashi ; Suzuki, Daisuke ; Aoyagi, Toshitaka ; Ishikawa, Takahide
Author_Institution :
High Freq. & Opt. Device Works, Mitsubishi Electr. Corp., Itami, Japan
Abstract :
1.3μm-band BH AlGaInAs DFB lasers with p-InP substrate are fabricated for 100GbE (25Gbps × 4 wavelengths). Very high mask margin of over 30% is achieved at 50°C under 25.8Gbps modulation with low operation current.
Keywords :
III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium compounds; indium compounds; semiconductor lasers; substrates; AlGaInAs; DFB lasers; InP; direct modulation; low driving current; substrate; temperature 50 degC; very high mask margin; Cavity resonators; Gratings; Optical filters; Optical modulation; Optical waveguides; Waveguide lasers;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
Conference_Location :
Kyoto
Print_ISBN :
978-1-4244-5683-3
DOI :
10.1109/ISLC.2010.5642644
