Title :
New elements in Si technology-a contamination risk?
Author_Institution :
Corporate Res., Infineon Technol., Munich, Germany
Abstract :
Increasing the integration density for Si devices and introducing new products will introduce novel elements access into Si technology. This, however, may pose a risk of contamination for these devices and, in general, for semiconductor fabrication lines. In this paper, we discuss some of the issues that might result from contamination by these new elements
Keywords :
elemental semiconductors; integrated circuit reliability; integrated circuit technology; integrated circuit yield; silicon; surface contamination; Si; Si devices; Si integration density; Si technology; contamination; contamination risk; element introduction; semiconductor fabrication lines; Conducting materials; Contamination; Copper; Fabrication; Ferroelectric films; Ferroelectric materials; Magnetic materials; Nonvolatile memory; Random access memory; Tunneling;
Conference_Titel :
Plasma- and Process-Induced Damage, 2001 6th International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-9651577-5-X
DOI :
10.1109/PPID.2001.929987
