DocumentCode
3193019
Title
New elements in Si technology-a contamination risk?
Author
Pamler, Werner
Author_Institution
Corporate Res., Infineon Technol., Munich, Germany
fYear
2001
fDate
2001
Firstpage
94
Lastpage
99
Abstract
Increasing the integration density for Si devices and introducing new products will introduce novel elements access into Si technology. This, however, may pose a risk of contamination for these devices and, in general, for semiconductor fabrication lines. In this paper, we discuss some of the issues that might result from contamination by these new elements
Keywords
elemental semiconductors; integrated circuit reliability; integrated circuit technology; integrated circuit yield; silicon; surface contamination; Si; Si devices; Si integration density; Si technology; contamination; contamination risk; element introduction; semiconductor fabrication lines; Conducting materials; Contamination; Copper; Fabrication; Ferroelectric films; Ferroelectric materials; Magnetic materials; Nonvolatile memory; Random access memory; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma- and Process-Induced Damage, 2001 6th International Symposium on
Conference_Location
Monterey, CA
Print_ISBN
0-9651577-5-X
Type
conf
DOI
10.1109/PPID.2001.929987
Filename
929987
Link To Document