Title :
Plasma charging damage in SOI technology
Author :
Mocuta, Anda C. ; Hook, Terence B. ; Chou, Anthony I. ; Wagner, Tina ; Stamper, Anthony K. ; Khare, Mukesh ; Gambino, Jeffrey P.
Author_Institution :
IBM Microelectron., Hopewell Junction, NY, USA
Abstract :
SOI MOSFET devices have proven very robust to plasma process induced gate oxide damage. In this work, we demonstrate that SOI devices with very large antenna ratios may be successfully fabricated without damage, provided that asymmetry of charging is not intentionally introduced, no connection is made to the wafer bulk, and that the integrity of the buried oxide is maintained
Keywords :
CMOS integrated circuits; MOSFET; buried layers; plasma materials processing; semiconductor device reliability; semiconductor device testing; silicon-on-insulator; sputter etching; surface charging; SOI MOSFET; SOI devices; SOI technology; Si-SiO2; antenna ratios; buried oxide integrity; charging asymmetry; damage-free fabrication; plasma charging damage; plasma process induced gate oxide damage; wafer bulk connection; Crystallization; Dielectric devices; Implants; MOSFET circuits; Microelectronics; Plasma devices; Plasma sources; Robustness; Silicon on insulator technology; Wire;
Conference_Titel :
Plasma- and Process-Induced Damage, 2001 6th International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-9651577-5-X
DOI :
10.1109/PPID.2001.929989
