The effect of substrate connections on charging potentials and current densities

Author

Lukaszek, Wes ; Gabriel, Calvin T.

Author_Institution

Wafer Charging Moniters Inc., Woodside, CA, USA

fYear

2001

fDate

2001

Firstpage

116

Lastpage

119

Abstract

Wafer potentials and charging currents have been found to depend on the area of antennas connected to substrate. In a medium-density plasma dielectric etch tool, smaller substrate-connected antennas resulted in large charging potentials and current densities on separate test structures, whereas larger antennas produced much lower potentials and current densities. In a high-density plasma metal etch tool, this dependence was significantly smaller. These findings imply that circuit layout can strongly modulate damage in test structures and product

Keywords

current density; dielectric thin films; integrated circuit interconnections; integrated circuit layout; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; integrated circuit yield; plasma applications; sputter etching; surface charging; antenna area; antenna size; charging current densities; charging currents; charging potentials; circuit layout; high-density plasma metal etch tool; medium-density plasma dielectric etch tool; product damage; substrate connections; substrate-connected antennas; test structure damage; test structures; wafer potentials; Circuit testing; Current density; Current measurement; Dielectric substrates; Etching; Plasma applications; Plasma chemistry; Plasma density; Plasma devices; Surface charging;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma- and Process-Induced Damage, 2001 6th International Symposium on

Conference_Location

Monterey, CA

Print_ISBN

0-9651577-5-X

Type

conf

DOI

10.1109/PPID.2001.929992

Filename

929992