Title :
The effect of substrate connections on charging potentials and current densities
Author :
Lukaszek, Wes ; Gabriel, Calvin T.
Author_Institution :
Wafer Charging Moniters Inc., Woodside, CA, USA
Abstract :
Wafer potentials and charging currents have been found to depend on the area of antennas connected to substrate. In a medium-density plasma dielectric etch tool, smaller substrate-connected antennas resulted in large charging potentials and current densities on separate test structures, whereas larger antennas produced much lower potentials and current densities. In a high-density plasma metal etch tool, this dependence was significantly smaller. These findings imply that circuit layout can strongly modulate damage in test structures and product
Keywords :
current density; dielectric thin films; integrated circuit interconnections; integrated circuit layout; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; integrated circuit yield; plasma applications; sputter etching; surface charging; antenna area; antenna size; charging current densities; charging currents; charging potentials; circuit layout; high-density plasma metal etch tool; medium-density plasma dielectric etch tool; product damage; substrate connections; substrate-connected antennas; test structure damage; test structures; wafer potentials; Circuit testing; Current density; Current measurement; Dielectric substrates; Etching; Plasma applications; Plasma chemistry; Plasma density; Plasma devices; Surface charging;
Conference_Titel :
Plasma- and Process-Induced Damage, 2001 6th International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-9651577-5-X
DOI :
10.1109/PPID.2001.929992
