Title :
Copper wetting of two-dimensional silicates: robust barriers for interconnect applications
Author :
Zhao, X. ; Leavy, M. ; Magtoto, N. ; Kelber, J.A.
Author_Institution :
Dept. of Chem., North Texas Univ., Denton, TX, USA
Abstract :
A critical issue in Cu/low-k integration is the wetting and adhesion of Cu to the barrier substrate. The data reported here demonstrate that the oxidation of a thin Ta film on SiO 2 results in the formation of a thin (∼6 Å) silicate-like film which displays excellent wettability towards Cu at 300 K.
Keywords :
adhesion; copper; integrated circuit interconnections; wetting; 300 K; Cu/low-k integration; adhesion; interconnects; oxidation; silicate-like film; two-dimensional silicates; wetting; Adhesives; Chemistry; Copper; Degradation; Displays; Oxidation; Robustness; Sputtering; Substrates; Temperature;
Conference_Titel :
Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International
Conference_Location :
Burlingame, CA, USA
Print_ISBN :
0-7803-6678-6
DOI :
10.1109/IITC.2001.930000
