Quasi-monolithic 4-GHz power amplifiers with 65-percent power-added efficiency

Author

Geller, B.D. ; Goettle, P.E.

Author_Institution

COMSAT Lab., Clarksburg, MD, USA

fYear

1988

fDate

25-27 May 1988

Firstpage

835

Abstract

A highly miniaturized C-band 1-W GaAs FET amplifier, part of a three-stage power amplifier for communications satellite applications, has been designed, fabricated, and tested. It achieves a maximum power-added efficiency of 65%, and occupies an area of 0.20 by 0.36 inches. The circuit uses a low-reactance termination at the second harmonic and low-loss quasimonolithic circuitry. Intermodulation distortion performance at intermediate and high drive levels was found to be comparable to that of a class A amplifier. These results were obtained on the first fabrication run and with no circuit tuning.<>

Keywords

III-V semiconductors; gallium arsenide; hybrid integrated circuits; microwave amplifiers; microwave integrated circuits; power amplifiers; satellite relay systems; 1 W; 4 GHz; 65 percent; C-band; FET amplifier; GaAs; III-V semiconductor; MIC; SHF; communications satellite applications; low-loss quasimonolithic circuitry; low-reactance termination; maximum power-added efficiency; microwave amplifiers; power amplifiers; three-stage power amplifier; Artificial satellites; Circuit optimization; Circuit testing; Drives; FETs; Fabrication; Gallium arsenide; High power amplifiers; Intermodulation distortion; Power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1988., IEEE MTT-S International

Conference_Location

New York, NY, USA

Type

conf

DOI

10.1109/MWSYM.1988.22162

Filename

22162