• DocumentCode
    3193349
  • Title

    Characterization of electroless copper as a seed layer for sub-0.1 /spl mu/m interconnects

  • Author

    Gandikota, S. ; McGuirk, C. ; Padhi, D. ; Parikh, S. ; Chen, J. ; Malik, A. ; Dixit, G.

  • Author_Institution
    Appl. Mater. Inc., Santa Clara, CA, USA
  • fYear
    2001
  • fDate
    6-6 June 2001
  • Firstpage
    30
  • Lastpage
    32
  • Abstract
    Complete gapfill of 0.1 μm features with electroless Cu seed layers and electroplated Cu was demonstrated. Electrical tests on test structures indicated similar line and via chain resistance, yield and line-to-line leakage current on wafers with electroless Cu seed and PVD Cu seed layers filled with electroplated Cu.
  • Keywords
    copper; electroless deposition; integrated circuit interconnections; Cu; electrical tests; electroless Cu seed layers; gapfill; leakage current; via chain resistance; yield; Atherosclerosis; Chemical elements; Copper; Electron traps; Microstructure; Sputtering; Substrates; Transistors; X-ray diffraction; X-ray imaging;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International
  • Conference_Location
    Burlingame, CA, USA
  • Print_ISBN
    0-7803-6678-6
  • Type

    conf

  • DOI
    10.1109/IITC.2001.930007
  • Filename
    930007
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3193349