Title :
FSG process development for copper/damascene technology
Author :
Martin, J.S. ; Taylor, K.J. ; Luttmer, J.D. ; Ralston, A.K.R. ; West, J.A. ; Bonifield, T.D. ; Mickler, E.M. ; Bolnedi, S. ; Adams, C.T. ; Chew, K.-H. ; Bayman, A. ; van Schravendijk, B.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
We report process characterization for a fluorosilicate glass (FSG), developed specifically for copper/damascene, where both the via and the line are embedded in FSG (K≤3.65) at 6 levels. We compare FSG films deposited in both high density plasma (HDP) and PECVD reactors, for K values within the range 3.50-3.70; PECVD FSG films absorb more water than HDP films. Several issues important in producing a manufacturable FSG technology are noted: FSG film thickness; deposition temperature and substrate dopant concentration; in-film fluorine concentration; and FSG/silicon nitride defectivity.
Keywords :
copper; dielectric thin films; fluorine; integrated circuit metallisation; integrated circuit yield; plasma CVD; process monitoring; silicon compounds; Cu; FSG process development; PECVD reactors; SiO/sub 2/:F; copper/damascene technology; defectivity; deposition temperature; film thickness; high density plasma; manufacturable FSG technology; process characterization; substrate dopant concentration; Copper; Glass; Inductors; Manufacturing; Plasma density; Plasma materials processing; Plasma temperature; Semiconductor films; Silicon; Substrates;
Conference_Titel :
Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International
Conference_Location :
Burlingame, CA, USA
Print_ISBN :
0-7803-6678-6
DOI :
10.1109/IITC.2001.930010
