DocumentCode :
3193452
Title :
Fast Modeling of 3D-Optical Carriers Injection and Permittivity in semiconductor substrate
Author :
Gary, René ; Arnould, Jean-Daniel ; Perron, Alexandre ; Pananakakis, Georges ; Vilcot, Anne
Author_Institution :
IMEP, UMR 5130 CNRS/INPG/UJF, 23 rue des martyrs, BP257, F-38016 Grenoble Cedex1, FRANCE Phone: +33 4 76 85 60 13, Fax: +33 4 76 85 60 80, Email: gary@enserg.fr
fYear :
2005
fDate :
12-14 Oct. 2005
Firstpage :
169
Lastpage :
172
Abstract :
In order to be faster and more precise than numerical way in the computation of the photo-induced plasma in semiconductor, we have to use an analytical approach to solve the problem. In this study, we use the Hankel transform to simplify the resolution of the differential equation of second order with non-constant coefficients, known as the diffusion equations. As a result, we obtain the 3-Dimension carrier density based on all the physical parameters of the substrate and of the laser beam. We are thus able to study the sensibility to optical power and then to compute the complex dielectric constant of the photo-induced plasma.
Keywords :
3D resolution; Hankel transforms; optical control; photo-induced; Charge carrier density; Dielectric substrates; Differential equations; Laser beams; Laser theory; Optical computing; Optical sensors; Permittivity; Plasma density; Transforms; 3D resolution; Hankel transforms; optical control; photo-induced;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Photonics, 2005. MWP 2005. International Topical Meeting on
Print_ISBN :
89-950043-3-9
Type :
conf
DOI :
10.1109/MWP.2005.203566
Filename :
1590294
Link To Document :
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