Pattern dependence study of copper planarization using linear polisher for 0.13 /spl mu/m applications

Author

Shih, T. ; Yao, C.H. ; Huang, L.K. ; Jang, S.M. ; Yu, C.H. ; Liang, M.S.

Author_Institution

Taiwan Semicond. Manuf. Co., Hsinchu, Taiwan

fYear

2001

fDate

6-6 June 2001

Firstpage

51

Lastpage

53

Abstract

In this work, the dependency of Cu planarization process upon local metal pattern density over a wide density range for 0.13 μm applications has been evaluated using a linear polisher. Results show that the amount of metal dishing and erosion strongly depend on metal density with worse planarization observed for higher metal density. The impact of the planarization result on electrical leakage of the upper metal is also studied. Various approaches have been experimented to resolve this issue. We found that the most effective solution is to implement oxide slot and polish time control. The effect of the layout of the oxide slot is also reported.

Keywords

copper; integrated circuit interconnections; integrated circuit metallisation; leakage currents; polishing; process control; surface topography; 0.13 mum; Cu; Cu planarization process; copper planarization; electrical leakage; erosion; layout; linear polisher; local metal pattern density; metal density; metal dishing; oxide slot; pattern dependence; polish time control; Copper; Dry etching; Integrated circuit technology; Manufacturing industries; Manufacturing processes; Metals industry; Planarization; Research and development; Semiconductor device manufacture; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International

Conference_Location

Burlingame, CA, USA

Print_ISBN

0-7803-6678-6

Type

conf

DOI

10.1109/IITC.2001.930014

Filename

930014