Title :
Fabrication of high efficiency CdTe thin film solar cells using electrodeposition
Author :
Song, W. ; Mao, D. ; Zhu, Y. ; Tang, J. ; Trefny, J.U.
Author_Institution :
Dept. of Phys., Colorado Sch. of Mines, Golden, CO, USA
Abstract :
The influences of CdTe and CdS film thicknesses and CdS pre-treatment on CdTe solar cell performances were investigated. The CdTe film thickness was varied from 2.2 to 5.3 μm. The CdS film thickness was varied from 700 Å to 2500 Å. The highest efficiencies were obtained with a CdTe thickness of 3.4 μm and a CdS thickness of 1500 Å. An increase of 2.7 mA/cm2 in Jsc was observed as a result of CdCl2 treatment of CdS, resulting from an improved spectral response in the wavelength range of 500-600 nm. CdCl2 treatment of CdS affects CdTe-CdS interdiffusion and leads to differences in optical transmission of CdS films. X-ray diffraction studies indicated the full conversion of CdS into CdS1-yTey ternary phase for films prepared with as-deposited CdS and very low concentration of CdS1-yTe y for films prepared with CdCl2-treated CdS
Keywords :
II-VI semiconductors; X-ray diffraction; cadmium compounds; chemical interdiffusion; light transmission; semiconductor materials; semiconductor thin films; solar cells; 2.2 to 5.3 mum; 500 to 600 nm; 700 to 2500 A; CdCl2; CdS film thickness; CdTe film thickness; CdTe-CdS; CdTe-CdS interdiffusion; CdTe/CdS thin film solar cells; X-ray diffraction studies; high efficiency; improved spectral response; optical transmission; solar cell performances; solar cells fabrication; ternary phase; Annealing; Anodes; Coatings; Electrodes; Fabrication; Optical films; Performance evaluation; Photovoltaic cells; Transistors; X-ray diffraction;
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-3166-4
DOI :
10.1109/PVSC.1996.564267
