• DocumentCode
    3193464
  • Title

    Fabrication of high efficiency CdTe thin film solar cells using electrodeposition

  • Author

    Song, W. ; Mao, D. ; Zhu, Y. ; Tang, J. ; Trefny, J.U.

  • Author_Institution
    Dept. of Phys., Colorado Sch. of Mines, Golden, CO, USA
  • fYear
    1996
  • fDate
    13-17 May 1996
  • Firstpage
    873
  • Lastpage
    876
  • Abstract
    The influences of CdTe and CdS film thicknesses and CdS pre-treatment on CdTe solar cell performances were investigated. The CdTe film thickness was varied from 2.2 to 5.3 μm. The CdS film thickness was varied from 700 Å to 2500 Å. The highest efficiencies were obtained with a CdTe thickness of 3.4 μm and a CdS thickness of 1500 Å. An increase of 2.7 mA/cm2 in Jsc was observed as a result of CdCl2 treatment of CdS, resulting from an improved spectral response in the wavelength range of 500-600 nm. CdCl2 treatment of CdS affects CdTe-CdS interdiffusion and leads to differences in optical transmission of CdS films. X-ray diffraction studies indicated the full conversion of CdS into CdS1-yTey ternary phase for films prepared with as-deposited CdS and very low concentration of CdS1-yTe y for films prepared with CdCl2-treated CdS
  • Keywords
    II-VI semiconductors; X-ray diffraction; cadmium compounds; chemical interdiffusion; light transmission; semiconductor materials; semiconductor thin films; solar cells; 2.2 to 5.3 mum; 500 to 600 nm; 700 to 2500 A; CdCl2; CdS film thickness; CdTe film thickness; CdTe-CdS; CdTe-CdS interdiffusion; CdTe/CdS thin film solar cells; X-ray diffraction studies; high efficiency; improved spectral response; optical transmission; solar cell performances; solar cells fabrication; ternary phase; Annealing; Anodes; Coatings; Electrodes; Fabrication; Optical films; Performance evaluation; Photovoltaic cells; Transistors; X-ray diffraction;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
  • Conference_Location
    Washington, DC
  • ISSN
    0160-8371
  • Print_ISBN
    0-7803-3166-4
  • Type

    conf

  • DOI
    10.1109/PVSC.1996.564267
  • Filename
    564267