Title :
A new failure observation in 0.10-/spl mu/m-wide Cu lines using optical beam induced resistance changes (OBIRCH)
Author :
Tagami, M. ; Fukase, T. ; Matsumoto, A. ; Iguchi, M. ; Hayashi, Y. ; Matsubara, Y.
Author_Institution :
NEC Corp., Sagamihara, Japan
Abstract :
We used an optical beam induced resistance changes (OBIRCH) method to analyze defects in 0.10-μm-wide Cu lines. Narrower lines and higher annealing temperatures strongly increased the defects probably due to Cu film agglomeration in very narrow line trenches. SiC capping of Cu lines reduced the numbers of defects drastically. Capping material is a key factor for 0.10-μm-wide, Cu metallization.
Keywords :
annealing; copper; failure analysis; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; 0.1 micron; Cu; Cu film agglomeration; Cu lines; Cu metallization; OBIRCH method; SiC; SiC capping; annealing temperatures; capping material; defects; failure observation; narrow line trenches; optical beam induced resistance changes; Annealing; Electron optics; Lithography; Optical beams; Optical films; Optical microscopy; Scanning electron microscopy; Silicon compounds; Surface resistance; Transmission electron microscopy;
Conference_Titel :
Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International
Conference_Location :
Burlingame, CA, USA
Print_ISBN :
0-7803-6678-6
DOI :
10.1109/IITC.2001.930028
