DocumentCode
3193701
Title
High frequency (GHz) and low resistance integrated inductors using magnetic materials
Author
Gardner, Donald S. ; Crawford, Ankur M. ; Wang, Shan
Author_Institution
Intel Corp., Santa Clara, CA, USA
fYear
2001
fDate
6-6 June 2001
Firstpage
101
Lastpage
103
Abstract
Integrated microinductors using magnetic materials were fabricated with cutoff frequencies over 3 GHz. Magnetic materials are typically not used in high-frequency inductors because their frequency range has been limited to <100 MHz. The high-frequency magnetic film, amorphous CoZrTa, was integrated into standard silicon process technology. Inductors consume large amounts of chip area, but with magnetic materials, the inductors can be made smaller thereby reducing their capacitance and resistance. A novel 3-dimensional structure for reducing the inductor´s resistance by an order of magnitude was also developed. Simulations of inductors with magnetics and measurements are presented.
Keywords
MMIC; UHF integrated circuits; amorphous magnetic materials; cobalt alloys; inductors; magnetic microwave devices; magnetic thin film devices; tantalum alloys; zirconium alloys; 3 GHz; 3-dimensional structure; 3D structure; CoZrTa; HF integrated inductors; Si; amorphous CoZrTa; capacitance reduction; high frequency integrated inductors; high-frequency magnetic film; integrated microinductors; low resistance integrated inductors; magnetic materials; resistance reduction; standard Si process technology; Amorphous magnetic materials; Amorphous materials; Capacitance; Cutoff frequency; Electrical resistance measurement; Inductors; Magnetic films; Magnetic materials; Semiconductor device measurement; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International
Conference_Location
Burlingame, CA, USA
Print_ISBN
0-7803-6678-6
Type
conf
DOI
10.1109/IITC.2001.930029
Filename
930029
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