DocumentCode
3193742
Title
Three-dimensional modeling of thermal flow in multi-finger high power HBTs
Author
Hattori, R. ; Shimura, Toshihiro ; Kato, Masaaki ; Sonoda, Takuji ; Takamiya, S.
Author_Institution
Optoelectron. & Microwave Devices Lab., Mitsubishi Electr. Corp., Hyogo, Japan
fYear
1995
fDate
16-20 May 1995
Firstpage
461
Abstract
Three-dimensional modeling of thermal flow in multi-finger HBTs has been investigated with thermal network method to find out the optimal structure which can effectively reduce the junction temperature uniformly in whole fingers under the high power operation. Thermal cross-talk effects and temperature distribution in a finger or between the fingers are examined. The HBT structure with emitter air-bridge connected to via hole is proposed as an optimal structure. The estimation accuracy of the calculation was confirmed from the good agreement between the calculation result and the measured value of the thermal resistance in HBT with the emitter air-bridge structure.<>
Keywords
crosstalk; heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; power bipolar transistors; semiconductor device models; temperature distribution; thermal resistance; emitter air-bridge; estimation accuracy; junction temperature; microwave power transistors; multi-finger high power HBTs; temperature distribution; thermal cross-talk effects; thermal flow; thermal network method; thermal resistance; three-dimensional modeling; Accuracy; Bridges; Electrical resistance measurement; Electromagnetic heating; Fingers; Gold; Heterojunction bipolar transistors; Microwave devices; Temperature distribution; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location
Orlando, FL, USA
ISSN
0149-645X
Print_ISBN
0-7803-2581-8
Type
conf
DOI
10.1109/MWSYM.1995.405946
Filename
405946
Link To Document