X and Ku band high power GaAs FETs

Author

Yamada, Y. ; Kuroda, H. ; Izumi, H. ; Soezima, T. ; Wakamatsu, H. ; Hori, S.

Author_Institution

Toshiba Corp., Kawasaki, Japan

fYear

1988

fDate

25-27 May 1988

Firstpage

847

Abstract

Internally matched GaAs FETs, with output powers of more than 10 W have been developed for the 10.7-11.7- and 14.0-14.5-GHz bands. These devices, with a total gate width of 32 mm, consist of two chips that are fabricated by direct ion implantation and chemical dry etching. At 14.25 GHz, the Ku-band device has achieved an output power of 41 dBm, a power gain of 5 dB and a power-added efficiency of 21%. At 11.2 GHz, the X-band device has delivered 41.2 dBm, 5.8 dB and 25%, respectively, at the 1-dB gain compression point.<>

Keywords

III-V semiconductors; field effect transistors; gallium arsenide; ion implantation; power transistors; solid-state microwave devices; 10 W; 10.7 to 11.7 GHz; 14 to 14.5 GHz; 21 percent; 25 percent; 32 mm; 5 dB; 5.8 dB; FETs; GaAs; III-V semiconductors; Ku-band device; SHF; X-band device; chemical dry etching; direct ion implantation; fabrication; high power transistors; internally matched devices microwave devices; power-added efficiency; total gate width; Bonding; Chemicals; Circuits; Etching; FETs; Fingers; Gallium arsenide; Ion implantation; Power generation; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1988., IEEE MTT-S International

Conference_Location

New York, NY, USA

Type

conf

DOI

10.1109/MWSYM.1988.22165

Filename

22165