Title :
Broadband lumped package modeling for scaling multi-cell GaN HEMT power devices
Author :
Halder, Subrata ; Kharabi, Faramarz ; Howle, Tim ; McMacken, John ; Burns, Christopher ; Le Fevre, M. ; Runton, Dave ; Gering, Joe
Abstract :
In this paper lumped approach to establish a package model for multi-cell GaN devices is presented. EM simulated s-parameters are matched to that measured on open and short structures. Initial lumped equivalent R-L-C elements are obtained by studying scaling behavior on standard elements. The model is integrated with GaN unit cell model to construct a package device. The model behavior is validated at 0.9, 2.1 and 3.5GHz for output power levels exceeding 100Watts for 1 to 10 cells at 48Volts.
Keywords :
gallium compounds; power HEMT; semiconductor device packaging; wide band gap semiconductors; EM simulated s-parameter; GaN; broadband lumped package modeling; frequency 0.9 GHz to 3.5 GHz; lumped approach; lumped equivalent R-L-C element; multicell HEMT power device; package device; Gallium nitride; HEMTs; Logic gates; Power amplifiers; Power generation; Scattering parameters; Semiconductor device modeling; MODFETs; power transistors; semiconductor device modeling; semiconductor device packaging;
Conference_Titel :
Microwave Measurement Conference (ARFTG), 2012 79th ARFTG
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4673-1229-5
Electronic_ISBN :
978-1-4673-1230-1
DOI :
10.1109/ARFTG79.2012.6291193
