• DocumentCode
    3193938
  • Title

    Electron distributions of charged dielectrics

  • Author

    Bonnelle, C. ; Jonnard, P. ; Vergand, F.

  • Author_Institution
    Lab. de Chimie Phys. Matiere et Rayonnement, Univ. Pierre et Marie Curie, Paris, France
  • fYear
    1995
  • fDate
    22-25 Oct 1995
  • Firstpage
    305
  • Lastpage
    308
  • Abstract
    The role of defect states on the trapping of incident electrons in a dielectric is discussed. Results of optical and X-ray luminescence concerning MgO and Al2O3 are presented as examples. Fluctuations of X-ray luminescence induced under irradiation by an electron beam of a few keV is shown
  • Keywords
    aluminium compounds; defect states; dielectric materials; electron beam effects; electron traps; magnesium compounds; photoluminescence; Al2O3; MgO; X-ray luminescence; charged dielectrics; defect states; electron beam irradiation; electron trapping; photoluminescence; Charge carrier processes; Dielectric constant; Electron optics; Electron traps; Lattices; Luminescence; Optical scattering; Phonons; Solids; Spectroscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Insulation and Dielectric Phenomena, 1995. Annual Report., Conference on
  • Conference_Location
    Virginia Beach, VA
  • Print_ISBN
    0-7803-2931-7
  • Type

    conf

  • DOI
    10.1109/CEIDP.1995.483724
  • Filename
    483724
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3193938