Title :
A scalable MMIC-compatible power HBT
Author :
Jackson, G. ; Teeter, D. ; Bradford, Dana ; Cobb, M.
Author_Institution :
Raytheon Co., Lexington, MA, USA
Abstract :
A MMIC-compatible, scalable HBT, utilizing heatsinking through Au interconnects to local via-holes, is described. At 2.45 GHz, 960 /spl mu/m/sup 2/ area HBTs exhibit 34.5 dBm output power, 15.5 dB gain and 57% PAE. At 10 GHz, 600 /spl mu/m/sup 2/ HBTs have 33 dBm output, 8 dB gain, 47% PAE. Thermal impedance is reduced 40% on smaller devices, and the need for emitter ballasting is eliminated.<>
Keywords :
III-V semiconductors; MMIC power amplifiers; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; microwave bipolar transistors; microwave power amplifiers; microwave power transistors; power bipolar transistors; semiconductor device metallisation; thermal resistance; 10 GHz; 15.5 dB; 2.45 GHz; 47 percent; 57 percent; 8 dB; AlGaAs-GaAs; Au; Au interconnects; MMIC power amplifiers; MMIC-compatible scalable power HBT; PAE; collector I-V characteristics; heatsinking; local via-holes; output power; thermal impedance reduction; Electronic ballasts; Fingers; Gallium arsenide; Gold; Heterojunction bipolar transistors; MMICs; Power amplifiers; Power generation; Power transmission lines; Thermal management;
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2581-8
DOI :
10.1109/MWSYM.1995.405947
