Abstract :
Summary form only given. Progress in the development of GaAs- and InP-based microwave and millimeter-wave device, circuit, and component technologies was reviewed. The state of the art in MESFET, HBT (heterojunction bipolar transistor), and HEMT (high electron mobility transistor) device technologies for applications in both low-noise amplification and high-efficiency power generation was examined. The development of monolithic integrated circuits for high-performance transmit/receive module, broadband receiver, and low-cost sensor applications was summarized and highlighted with circuit examples of single- and multiple-function MMICs (monolithic microwave integrated circuits). Progress in the development of advanced components based on the integration of these MMICs was also presented. Package design criteria for complex multichip components were discussed in terms of RF performance, size, weight, thermal conductivity, and cost constraints.<>
Keywords :
III-V semiconductors; MMIC; Schottky gate field effect transistors; gallium arsenide; heterojunction bipolar transistors; high electron mobility transistors; indium compounds; integrated circuit technology; semiconductor technology; solid-state microwave devices; GaAs; HBT; HEMT; InP; MESFET; broadband receiver; complex multichip components; high-efficiency power generation; high-performance transmit/receive module; low-noise amplification; microwave circuits; microwave devices; millimeter-wave circuits; millimeter-wave devices; monolithic integrated circuits; multiple-function MMIC; package design criteria; sensors; single-function MMIC; HEMTs; Heterojunction bipolar transistors; Integrated circuit technology; MMICs; Microwave circuits; Microwave devices; Millimeter wave circuits; Millimeter wave devices; Millimeter wave technology; Monolithic integrated circuits;
Conference_Titel :
Antennas and Propagation Society International Symposium, 1992. AP-S. 1992 Digest. Held in Conjuction with: URSI Radio Science Meeting and Nuclear EMP Meeting., IEEE
