Title :
Properties of ion-implanted low-k organic SOG
Author :
Matsubara, Naoteru ; Mizuhara, H. ; Yamashita, K.M.K. ; Goto, Tetsu ; Inoue, Yasuyuki ; Ibaraki, A.
Author_Institution :
Microelectron. Res. Center, Sanyo Electr. Co. Ltd., Gifu, Japan
Abstract :
The properties of ion-implanted low-k organic SOG films were investigated in detail. It was found that the organic species of the SOG were decomposed and that the film density of the SOG was increased by ion implantation. Consequently the oxygen plasma resistance of the ion-implanted SOG film was improved, and a good characteristic was obtained for via resistance. We applied the ion-implanted SOG film to 180 nm Al-based interconnects, and it was found that the film between the metal lines preserves its low-k characteristics (k=3.1). Furthermore, copper diffusion in the organic SOG film was reduced by ion implantation, making it possible to apply the ion-implanted SOG to a Cu diffusion barrier layer.
Keywords :
aluminium; chemical interdiffusion; copper; density; dielectric thin films; diffusion barriers; glass; integrated circuit interconnections; integrated circuit metallisation; ion implantation; organic compounds; plasma materials processing; spin coating; 180 nm; Al; Al-based interconnects; Cu; Cu diffusion barrier layer; copper diffusion; film density; ion implantation; ion-implanted SOG film; ion-implanted low-k organic SOG films; low-k characteristics; metal line; organic species; oxygen plasma resistance; via resistance; Adhesives; Copper; Delay; Dielectric constant; Fabrication; Ion implantation; Plasma applications; Plasma density; Plasma immersion ion implantation; Plasma properties;
Conference_Titel :
Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International
Conference_Location :
Burlingame, CA, USA
Print_ISBN :
0-7803-6678-6
DOI :
10.1109/IITC.2001.930048
