Film properties and integration of a variety of FSG films

Author

Wistrom, R. ; Bomberger, G. ; Cohen, S. ; Hazel, S. ; Lavoie, M. ; Gambino, J. ; Poley, D. ; Dokumaci, O.

Author_Institution

Div. of Microelectron., IBM Corp., Essex Junction, VT, USA

fYear

2001

fDate

6-6 June 2001

Firstpage

168

Lastpage

170

Abstract

FSG films were deposited using a wide variety of manufacturing processes employing PECVD, HDP-CVD with both SiH₄-based and TEOS-based chemistries. Physical and chemical properties were compared for blanket films, and parametric and defect analysis was performed on integrated circuit test structures. Blanket wafer results indicate that the TEOS-based films had the best stability.

Keywords

chemical vapour deposition; dielectric thin films; fluorine; glass; glass structure; integrated circuit interconnections; integrated circuit testing; noncrystalline defects; plasma CVD; silicon compounds; FSG films; HDP-CVD; PECVD; SiH/sub 4/; SiH/sub 4/-based chemistry; SiO/sub 2/:F; TEOS-based chemistry; blanket films; blanket wafers; chemical properties; defect analysis; film properties; fluorinated silicate glass; integrated circuit test structures; integration; parametric analysis; physical properties; stability; Adhesives; Chemical analysis; Circuit testing; Compressive stress; Dielectric constant; Microelectronics; Optical films; Polarization; Semiconductor films; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International

Conference_Location

Burlingame, CA, USA

Print_ISBN

0-7803-6678-6

Type

conf

DOI

10.1109/IITC.2001.930049

Filename

930049