DocumentCode :
3194059
Title :
Electromagnetic characterization of high-speed VLSI interconnects with perforated reference planes
Author :
Cangellaris, A.C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA
fYear :
1992
fDate :
18-25 June 1992
Abstract :
Summary form only given. Within the limits of the quasi-TEM (transverse electromagnetic) approximation, the validity of a simple dispersive model for the electrical analysis of interconnections with perforated reference planes was examined. The advantage of this model is that simple 2-D transmission-line parameter extraction programs are mainly utilized and, combined with an appropriate electromagnetic analysis of the periodic interconnect geometry, lead to a computationally efficient prediction of the transmission line characteristics of the interconnections. The proposed model was extended to the electrical characterization of coupled interconnects, as well as interconnects located on either side of a perforated plane. Comparisons with experimental results and results obtained using rigorous full-wave techniques were used to demonstrate the validity of the proposed model.<>
Keywords :
VLSI; packaging; transmission line theory; 2D transmission line parameter extraction programs; EM characterisation; coupled interconnects; dispersive model; electrical analysis; high-speed VLSI interconnects; perforated reference planes; periodic interconnect geometry; quasi-TEM approximation; Computational geometry; Couplings; Dispersion; Electromagnetic analysis; Electromagnetic modeling; Parameter extraction; Predictive models; Solid modeling; Transmission lines; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Antennas and Propagation Society International Symposium, 1992. AP-S. 1992 Digest. Held in Conjuction with: URSI Radio Science Meeting and Nuclear EMP Meeting., IEEE
Conference_Location :
Chicago, IL, USA
Print_ISBN :
0-7803-0730-5
Type :
conf
DOI :
10.1109/APS.1992.221658
Filename :
221658
Link To Document :
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